sot23 npn silicon planar medium power transistors issue 4 ? june 1996 features * 80 volt v ceo * gain of 50 at i c =100ma partmarking detail ? FMMTA05 ? 1h fmmta06 ? 1g FMMTA05r ? na fmmta06r ? ma absolute maximum ratings. parameter symbol FMMTA05 fmmta06 unit collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 4v continuous collector current i c 500 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol FMMTA05 fmmta06 unit conditions. min. max. min. max. collector-emitter breakdown voltage v (br)ebo 60 80 v i c =1ma* emitter-base breakdown voltage v (br)ebo 44 v i e =100 m a collector cut-off current i ces 0.1 0.1 m a v ces =60v collector cut-off current i cbo 0.1 0.1 m a m a v cb =60v v cb =80v static forward current transfer ratio h fe 50 50 50 50 i c =10ma, v ce =1v* i c =100ma, v ce =1v* collector-emitter saturation voltage v ce(sat) 0.25 0.25 v i c =100ma, i b =10ma* base-emitter turn-on voltage v be(on) 1.2 1.2 v i c =100ma, v ce =1v* transition frequency f t 100 100 mhz i c =10ma, v ce =2v f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMTA05 fmmta06 c b e sot23 3 - 173
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